Title :
Study of doping effects on Ta2O5−x/ TaOy based bilayer RRAM devices
Author :
Kun Wang ; Huaqiang Wu ; Xinyuan Wang ; Xinyi Li ; He Qian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Doping effects of Al, Si, P, and S on the key resistive switching performances for Ta2O5-x/TaOy based bilayer RRAM devices were studied systematically. Forming voltages were reduced by Si, P, and S dopants. Uniformity of ON/OFF resistance and operational voltages for the doped devices was improved. P doped devices exhibit the best resistive switching performances including forming voltage uniformity, operational voltages and ON/OFF resistance distribution. This paper gives the glance of dopants selection guidelines for the Ta oxide based RRAM devices.
Keywords :
aluminium; phosphorus; resistive RAM; semiconductor doping; silicon; sulphur; tantalum compounds; Ta2O5-x-TaOy:Al-Si-P-S; bilayer RRAM devices; dopant selection guidelines; doped devices; doping effect study; forming voltage reduction; forming voltage uniformity; on-off resistance distribution; operational voltages; resistive switching performance; Annealing; Guidelines; ISO standards; Performance evaluation; Radio frequency; Switches; RRAM; doping effects; tantalum oxide;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061254
