DocumentCode :
3578211
Title :
Inx Ga1−x As materials for post CMOS application: Materials and device aspects
Author :
Chang, Edward Yi ; Yueh-Chin Lin ; Quang-Ho Luc ; Hai-Dang Trinh ; Jing-Neng Yao ; Po-Chun Chang
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2014
Firstpage :
1
Lastpage :
2
Abstract :
High mobility InxGa1-xAs material is one of the most promising candidates as channel material for post CMOS device applications. In this presentation, InxGa1-xAs material based MOS capacitors will be studied for possible applications for future III-V MOSFET, TFET and FINFET devices. To improve the gate leakage of the InxGa1-xAs MOSCAP, the combination of wet chemical treatment and in-situ trimethyl aluminum (TMA) pretreatment was found to be the most effective method for InxGa1-xAs surface cleaning to achieve a fully inverted InxGa1-xAs MOSCAP for post CMOS digital applications. In addition, a high-k composite oxide composed of La2O3 and HfO2 is investigated for InxGa1-xAs metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3(0.8 nm)/ HfO2(0.8 nm) on InxGa1-xAs with post deposition annealing at 500 °C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (Dit) of 7.0 × 1011 cm-2eV-1, small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOS capacitors; MOSFET; annealing; carrier mobility; gallium arsenide; hafnium compounds; indium compounds; lanthanum compounds; surface cleaning; CMOS digital applications; FINFET devices; HfO2; III-V MOSFET devices; InxGa1-xAs; La2O3; MOS capacitors; MOSCAP; TFET devices; TMA pretreatment; channel material; gate leakage; high mobility material; interface trap density; metal-oxide-semiconductor capacitor; post CMOS application; post deposition annealing; size 2.2 nm; surface cleaning; temperature 500 degC; trimethyl aluminum pretreatment; voltage 200 mV; wet chemical treatment; Annealing; CMOS integrated circuits; Capacitors; FinFETs; Gate leakage; MOS capacitors; Al2O3; HfO2; InxGa1−xAs; La2O3; MOSCAP; surfacement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type :
conf
DOI :
10.1109/EDSSC.2014.7061287
Filename :
7061287
Link To Document :
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