Title :
A F-band balanced power amplifier in 0.15µm GaAs pHEMT process
Author :
Min-Li Chou ; Fan-Hsiu Huang ; Hsien-Chin Chiu
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
The design of balanced power amplifier (PA) is proposed in this manuscript which is operated from 46.0 to 66.5 GHz. The circuit is fabricated in WIN 0.15 μm GaAs pHEMT process. The performance of circuit is designed for achieving high output power and broadband characteristics. To further reduce the layout area for the coupler design, the three-dimensional of vertical coupling mode was used in the PA circuit. The circuit exhibits the small-signal gain of 10.0 dB. The maximum output power is up to 10 dBm. The total chip area including on-chip coupler is 1.16 × 0.79 mm2.
Keywords :
HEMT integrated circuits; III-V semiconductors; coupled circuits; gallium arsenide; integrated circuit design; millimetre wave power amplifiers; GaAs; PA circuit; V-band balanced power amplifier; WIN GaAs pHEMT process; coupler design; frequency 46.0 GHz to 66.5 GHz; gain 10 dB; size 0.15 mum; size 0.79 mm; size 1.16 mm; Broadband communication; Couplers; Gallium arsenide; PHEMTs; Power amplifiers; Power generation; Radiofrequency integrated circuits;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062275
