W-band InP DHBT MMIC Power Amplifier

Author

Guohua Gu ; Lei Wang ; Weibo Wang ; Wei Cheng ; Yuan Wang ; Haiyan Lu ; Oupeng Li ; Jian Zhang ; Yong Zhang

Author_Institution

Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

Firstpage

600

Lastpage

602

Abstract

In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors. The total circuit shows small signal gain is above 15dB from 90GHz to 96GHz, and the simulated saturation output power reaches 18.5dBm@94GHz. The chip area is only 1.61mm×1.03mm. This W-band power amplifier MMIC is now being fabricated in progress on the NEDI compound semiconductor process line.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor process modelling; InP-InGaAs-InP; MMIC power amplifier; NEDI compound; W-band InP DHBT; W-band power amplifier MMIC; double heterojunction bipolar transistor; frequency 90 GHz to 96 GHz; monolithic W-band power amplifier; semiconductor process line; DH-HEMTs; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling; MMICs; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Problem-Solving (ICCP), 2014 IEEE International Conference on

Print_ISBN

978-1-4799-4246-6

Type

conf

DOI

10.1109/ICCPS.2014.7062355

Filename

7062355