Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistor

Author

Glosekötter, Peter ; Pacha, Christian ; Goser, Karl F. ; Wirth, Gilson I. ; Prost, Werner ; Auer, Uwe ; Agethen, Michael ; Velling, Peter ; Tegude, Franz J.

Author_Institution

Dept. of Microelectron., Dortmund Univ., Germany

fYear

2000

fDate

2000

Firstpage

150

Lastpage

155

Abstract

This paper describes a novel design method for digital logic circuits based on the resonant-tunneling-heterojunction-bipolar-transistor (RTBT). Besides drift and diffusion, the RTBT uses tunneling as transport mechanism leading to an enhanced I-V characteristics. The particular properties of the RTBT are exploited in a monostable-bistable transition logic element (MOBILE) configuration. As a promising candidate for future nano-scale integration, the pseudo dynamic operation of the MOBILE is analyzed. In this connection the increased computational functionality of MOBILE based circuits keeps the complexity of the circuit low

Keywords

bipolar logic circuits; heterojunction bipolar transistors; logic design; logic gates; resonant tunnelling transistors; MOBILE based circuits; MOBILE configuration; RTBT based circuits; RTHBT; computational functionality; digital circuit design; digital logic circuits; enhanced I-V characteristics; heterojunction bipolar transistor; low circuit complexity; monostable-bistable transition logic element; pseudo dynamic operation; resonant-tunneling HBT; resonant-tunneling-hetero-junction-bipolar-transistor; tunneling transport mechanism; Bipolar transistors; Digital circuits; Heterojunction bipolar transistors; Informatics; Logic circuits; Logic devices; Low voltage; Microelectronics; Resonant tunneling devices; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits and Systems Design, 2000. Proceedings. 13th Symposium on

Conference_Location

Manaus

Print_ISBN

0-7695-0843-X

Type

conf

DOI

10.1109/SBCCI.2000.876023

Filename

876023