DocumentCode
3581968
Title
The experimental study of THz image sensor in 0.18 µm CMOS technology
Author
Lai, Chih-Wei ; Chen, Wei-Cheng ; Yan, Tzu-Chao ; Li, Chun-Hsing ; Kuo, Chien-Nan
Author_Institution
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan
fYear
2014
Firstpage
148
Lastpage
150
Abstract
In this study, four different types of power detectors are implemented in 0.18 µm CMOS technology for the THz image sensor application. These power detectors include common-source with and without supply voltage, and common-gate with and without supply voltage. The measured responsivities at 332 GHz are 632 kV/W, 13.2 kV/W, 16.2 kV/W, and 9.1 kV/W, respectively. The image resolution of the proposed THz sensor is 2 mm.
Keywords
Abstracts; Cities and towns; Decision support systems; Electrical engineering; Finite element analysis; Hafnium; Solid state circuits; CMOS; THz image; power detector; responsivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (APMC), 2014 Asia-Pacific
Type
conf
Filename
7067977
Link To Document