DocumentCode :
3585402
Title :
Advanced process control of effective field height in a single wafer spin cleaning tool
Author :
Wen-Ming Chang ; Chun-Ling Chiang ; Chun-Ming Cheng ; Jung-Yu Hsieh ; Ling-Wu Yang ; Tahone Yang ; Kuang-Chao Chen ; Chih-Yuan Lu
Author_Institution :
Technol. Dev. Center, Macronix Int. Co. Ltd., Hsinchu, Taiwan
fYear :
2014
Firstpage :
1
Lastpage :
4
Abstract :
The oxide loss behavior of buffered hydrofluoric (BHF) acid etch solution with elapsed time was investigated with and without advanced process control system (APC). The oxide loss amount increases with increasing the elapsed time in etching solution of BHF. The variation of BHF solution is considerable improved by at least to zero at run to run with APC. The result indicates this system is a promising solution method for well control in process window at mass production.
Keywords :
cleaning; etching; mass production; process control; semiconductor industry; semiconductor technology; APC; BHF acid etch solution; advanced process control system; buffered hydrofluoric acid etch solution; effective field height; etching solution; mass production; oxide loss amount; oxide loss behavior; process window; single wafer spin cleaning tool; Control systems; Logic gates; Manufacturing; Process control; Topology; Wet etching; Advanced Process Control (APC); BHF; Elapsed time;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
e-Manufacturing and Design Collaboration Symposium (eMDC), 2014
Type :
conf
Filename :
7081694
Link To Document :
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