DocumentCode
3585602
Title
A pure-CMOS nonvolatile multi-context configuration memory for dynamically reconfigurable FPGAs
Author
Tatsumura, Kosuke ; Oda, Masato ; Yasuda, Shinichi
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
fYear
2014
Firstpage
215
Lastpage
222
Abstract
Multi-context configuration memory stores multiple sets of configuration data and changes the entire configuration of FPGA quickly, enabling enhancement of hardware utilization with dynamic reconfiguration architectures. The memory area for one set of configuration data should be much smaller than the computational resource it controls. In this paper, we propose a pure-CMOS, nonvolatile, and small-footprint multi-context configuration memory. The multi-context memory includes multiple 2Tr nonvolatile memory elements, which are programmed by channel hot-electron injection, and allows context switching in a single clock cycle. A primitive dynamically reconfigurable device having a lookup table and minimum interconnect backed by 16-bit 8-context configuration memory was fabricated by a 0.18 um CMOS process and its functionality was demonstrated. The 2Tr nonvolatile memory element is more than 4 times denser than 6Tr SRAM, enabling achievement of greater logic density. The pure-CMOS and nonvolatile features would enhance the attractiveness of the technology in many applications.
Keywords
CMOS memory circuits; SRAM chips; field programmable gate arrays; logic design; random-access storage; CMOS nonvolatile multi-context configuration memory; FPGA; SRAM; channel hot-electron injection; computational resource; context switching; size 0.18 mum; word length 16 bit; Arrays; Channel hot electron injection; Context; Field programmable gate arrays; Nonvolatile memory; Programming; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Field-Programmable Technology (FPT), 2014 International Conference on
Print_ISBN
978-1-4799-6244-0
Type
conf
DOI
10.1109/FPT.2014.7082778
Filename
7082778
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