Title :
Nonvolatile, high density, high performance phase-change memory
Author :
Tyson, Scott ; Wicker, Guy ; Lowrey, Tyler ; Hudgens, Stephen ; Hunt, Ken
Author_Institution :
Mission Res. Corp., Albuquerque, NM, USA
Abstract :
An electrically reprogrammable resistor approach has been developed as a basis for a new nonvolatile memory that is potentially denser, faster, and easier to make than Dynamic RAM (DRAM). It relies on structural phase transitions induced by nanosecond-scale heating and cooling of small volumes of chalcogenide films within the memory cell. Initial target markets include FLASH memory, embedded memory, and DRAM
Keywords :
DRAM chips; chalcogenide glasses; flash memories; solid-state phase transformations; DRAM; FLASH memory; MOSFET; chalcogenide films; dynamic RAM; electrically reprogrammable resistor; embedded memory; high performance phase-change memory; nanosecond-scale cooling; nanosecond-scale heating; nonvolatile memory; structural phase transitions; Amorphous materials; Conducting materials; Cooling; Crystalline materials; Crystallization; Nonvolatile memory; Phase change memory; Random access memory; Semiconductor materials; Temperature;
Conference_Titel :
Aerospace Conference Proceedings, 2000 IEEE
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-5846-5
DOI :
10.1109/AERO.2000.878512
