DocumentCode
3586280
Title
Low power challenge and solution for advanced mobile device design
Author
Haiqing Nan ; Dong Ke ; Ken Choi
Author_Institution
Logical & Phys. Synthesis Dept., Intel Mobile Commun. Technol. Ltd., Xi´an, China
fYear
2014
Firstpage
19
Lastpage
21
Abstract
With CMOS technology scaled down, leakage power becomes one of the most important design concerns for mobile device. In this paper, low power and leakage reduction methods in industry for 28nm CMOS technology are introduced. The methodologies which will be discussed include long poly cell ratio optimization, ultralow Vt (threshold voltage) cell ratio optimization, power switch cell insertion, daisy chain number optimization, voltage scaling as well as power island optimization. The advantages and design overhead of these approaches will be discussed as well.
Keywords
CMOS integrated circuits; circuit optimisation; leakage currents; low-power electronics; switches; CMOS technology; advanced mobile device design; daisy chain number optimization; leakage power; long poly cell ratio optimization; low power method; power island optimization; power switch cell insertion; ultralow threshold voltage cell ratio optimization; voltage scaling; CMOS integrated circuits; CMOS technology; Industries; Lead; Mobile communication; Nanoscale devices; Performance evaluation; Leakage power; Low power; Mobile Device; Nanoscale CMOS;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2014 International
Type
conf
DOI
10.1109/ISOCC.2014.7087564
Filename
7087564
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