• DocumentCode
    3586280
  • Title

    Low power challenge and solution for advanced mobile device design

  • Author

    Haiqing Nan ; Dong Ke ; Ken Choi

  • Author_Institution
    Logical & Phys. Synthesis Dept., Intel Mobile Commun. Technol. Ltd., Xi´an, China
  • fYear
    2014
  • Firstpage
    19
  • Lastpage
    21
  • Abstract
    With CMOS technology scaled down, leakage power becomes one of the most important design concerns for mobile device. In this paper, low power and leakage reduction methods in industry for 28nm CMOS technology are introduced. The methodologies which will be discussed include long poly cell ratio optimization, ultralow Vt (threshold voltage) cell ratio optimization, power switch cell insertion, daisy chain number optimization, voltage scaling as well as power island optimization. The advantages and design overhead of these approaches will be discussed as well.
  • Keywords
    CMOS integrated circuits; circuit optimisation; leakage currents; low-power electronics; switches; CMOS technology; advanced mobile device design; daisy chain number optimization; leakage power; long poly cell ratio optimization; low power method; power island optimization; power switch cell insertion; ultralow threshold voltage cell ratio optimization; voltage scaling; CMOS integrated circuits; CMOS technology; Industries; Lead; Mobile communication; Nanoscale devices; Performance evaluation; Leakage power; Low power; Mobile Device; Nanoscale CMOS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SoC Design Conference (ISOCC), 2014 International
  • Type

    conf

  • DOI
    10.1109/ISOCC.2014.7087564
  • Filename
    7087564