• DocumentCode
    3586339
  • Title

    SEU-tolerant active body-bias inverter

  • Author

    Youngkyu Jang ; Ik-Joon Chang ; Jinsang Kim ; Seungjoo Lee

  • Author_Institution
    Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea
  • fYear
    2014
  • Firstpage
    234
  • Lastpage
    235
  • Abstract
    PD-SOI (Partial Depleted Silicon On Insulator) process is a good candidate technology for space system designs, since it features excellent insulation to the silicon substrate compared to the conventional bulk process. However, the radioactive particles from the low earth orbit can causes the single event upset (SEU) or the charge collection in a circuit node, leading to a logical error. We propose SEU-tolerant CMOS logic inverter using a novel active body-bias scheme.
  • Keywords
    CMOS logic circuits; invertors; radiation hardening (electronics); silicon-on-insulator; CMOS logic inverter; PD-SOI; SEU-tolerant inverter; Si; active body-bias inverter; charge collection; circuit node; excellent insulation; low earth orbit; partial depleted silicon on insulator; radioactive particles; silicon substrate; single event upset; space system designs; Insulators; Lead; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SoC Design Conference (ISOCC), 2014 International
  • Type

    conf

  • DOI
    10.1109/ISOCC.2014.7087623
  • Filename
    7087623