DocumentCode
3586339
Title
SEU-tolerant active body-bias inverter
Author
Youngkyu Jang ; Ik-Joon Chang ; Jinsang Kim ; Seungjoo Lee
Author_Institution
Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea
fYear
2014
Firstpage
234
Lastpage
235
Abstract
PD-SOI (Partial Depleted Silicon On Insulator) process is a good candidate technology for space system designs, since it features excellent insulation to the silicon substrate compared to the conventional bulk process. However, the radioactive particles from the low earth orbit can causes the single event upset (SEU) or the charge collection in a circuit node, leading to a logical error. We propose SEU-tolerant CMOS logic inverter using a novel active body-bias scheme.
Keywords
CMOS logic circuits; invertors; radiation hardening (electronics); silicon-on-insulator; CMOS logic inverter; PD-SOI; SEU-tolerant inverter; Si; active body-bias inverter; charge collection; circuit node; excellent insulation; low earth orbit; partial depleted silicon on insulator; radioactive particles; silicon substrate; single event upset; space system designs; Insulators; Lead; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2014 International
Type
conf
DOI
10.1109/ISOCC.2014.7087623
Filename
7087623
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