Title :
Application of new distributed IGBT and diode models to the analysis of chopper cells and short circuits with SABER
Author :
Massol, J.L. ; Bareille, M. ; Dienot, J.M. ; Dubreuil, F.
Author_Institution :
GECET/IUT, Tarbes, France
Abstract :
Distributed models of diode and IGBT previously validated in ESACAP are implemented in SABER. The advantages of these simplified physical models for power electronics are demonstrated in the analysis of the chopper cell and the short circuited IGBT (turn-on, turn-off, influence of both gate resistance and supply voltage)
Keywords :
choppers (circuits); circuit simulation; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; short-circuit currents; SABER; chopper cells; distributed IGBT models; distributed diode models; gate resistance; power electronics; short circuited IGBT; short circuits; supply voltage; turn-off; turn-on; Charge carrier processes; Choppers; Circuit simulation; Differential equations; Insulated gate bipolar transistors; Joining processes; Power electronics; Power semiconductor switches; Semiconductor diodes; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location :
Galway
Print_ISBN :
0-7803-5692-6
DOI :
10.1109/PESC.2000.878852
