DocumentCode
3589019
Title
Power delivery solutions in 3-D processor-DRAM systems in presence of hot spots
Author
Zabihi, Masoud ; Radfar, Farzad ; Sarvari, Reza
Author_Institution
Dept. of Electr. Eng., Sharif Univ. of Technol., Tehran, Iran
fYear
2014
Firstpage
207
Lastpage
210
Abstract
An important application of 3-D integration technology is stacked processor-DRAM systems. One of the major design issues in 3-D processor-DRAM stacks is power delivery. Presence of hot spots, high density power regions, in processor die poses serious challenges to the design of power distribution network (PDN). In this paper, we investigate solutions to ensure power integrity in the hot spot regions.
Keywords
integrated circuit interconnections; integrated circuit packaging; microprocessor chips; random-access storage; thermal management (packaging); three-dimensional integrated circuits; 3D processor-DRAM systems; hot spots; power delivery; processor die; stacked processor-DRAM system; Fluctuations; Noise; Power supplies; Solid modeling; Through-silicon vias; Voltage fluctuations; 3-D processor-DRAM integrated system; hot spot; power distribution network (PDN); power supply noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2014 IEEE 23rd Conference on
Print_ISBN
978-1-4799-3641-0
Type
conf
DOI
10.1109/EPEPS.2014.7103635
Filename
7103635
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