Experiment to optimize gate leakage by variation in device parameters in SOI DG nMOS

Author

Suman, Mukesh Kumar ; Kumar, Sandeep ; Bhowmic, Brinda

Author_Institution

Electron. & Commun. Eng. Dept., NIT Silchar, Silchar, India

fYear

2014

Firstpage

1

Lastpage

5

Abstract

In this paper we try to optimize the Gate leakage current of ultra-thin SOI Double-Gate n-channel MOSFET by varying device parameters such as Si film thickness, Gate length, channel doping, Gate oxide thickness and buried oxide thickness. The ultimate size scaling limits of MOSFET is explored owing to scaling down of critical feature dimension size below 10nm. In this paper, we use a non-equilibrium Green´s function (NEGF) approach. The two-dimensional self-consistent Schrodinger-Poisson solver with open boundaries is used to capture the quantum mechanical nature of carrier transport.

Keywords

Green´s function methods; MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; leakage currents; semiconductor device models; silicon; silicon-on-insulator; NEGF approach; Si; Si film thickness; buried oxide thickness; carrier transport; channel doping; critical feature dimension size; device parameters; gate leakage current; gate length; gate oxide thickness; nonequilibrium Green´s function approach; open boundaries; quantum mechanical nature; two-dimensional self-consistent Schrodinger-Poisson solver; ultimate size scaling limits; ultra-thin SOI double-gate n-channel MOSFET; Doping; Gate leakage; Logic gates; MOSFET; Silicon; Double-Gate; Green´s function; Poisson solver; SOI;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Engineering and Technology (ICAET), 2014 International Conference on

Type

conf

DOI

10.1109/ICAET.2014.7105240

Filename

7105240