DocumentCode
3589525
Title
High-speed and high-power InGaAs/InP photodiode
Author
Hua Yang ; Daunt, C. ; Kohsin Lee ; Wei Han ; Guy, F. ; Corbett, Brandon
Author_Institution
UCC, Tyndall Nat. Inst., Cork, Ireland
fYear
2011
Firstpage
1
Lastpage
4
Abstract
The photodiode (PD) is a key component in optical transmission and optical measurement systems. In this paper, we present an InP-based InGaAs Uni-traveling Carrier (UTC) PD designed and fabricated for high speed and high power applications. A UTC PD with a 40μ×5μm wave guide shows a 3dB bandwith up to 40GHz and photocurrents of up to 10mA without saturation in our measurement range.
Keywords
III-V semiconductors; electric current measurement; gallium arsenide; indium compounds; optical communication equipment; optical design techniques; optical fabrication; optical waveguides; photoconductivity; photodiodes; InP-InGaAs; high-speed high-power photodiode; optical measurement systems; optical transmission systems; optical waveguides; photocurrents; unitraveling carrier; Indium phosphide;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Print_ISBN
978-1-4577-1753-6
Electronic_ISBN
978-3-8007-3356-9
Type
conf
Filename
5978307
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