Title :
Current-injected quantum-dot microdisk lasers operating at room temperature
Author :
Mao, M.-H. ; Chien, H.C. ; Hong, J.Z.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
In this work, we demonstrate current-injected InGaAs quantum dot microdisk lasers operating at room temperature. These microdisk lasers are fabricated by using e-beam lithography, wet etching, and planarization techniques. In measurement at room temperature, the cavity diameter which we observed the lasing phenomenon is 8.5 μm. The threshold current is as low as 1.8 mA.
Keywords :
III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; laser cavity resonators; microcavity lasers; microdisc lasers; optical fabrication; planarisation; quantum dot lasers; InGaAs; current-injected quantum-dot microdisk lasers; e-beam lithography; laser cavity; optical fabrication; planarization techniques; size 8.5 mum; temperature 293 K to 298 K; threshold current; wet etching; Current measurement; Gallium arsenide; Laser modes; Measurement by laser beam; Metals; Quantum dot lasers;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
