A contribution to the modeling of short channel MOSFETs for HF circuit simulations

Author

Gunselmann, Christian ; Langmann, U. ; Korbel, A.

Author_Institution

Ruhr-Univ., Bochum, Germany

Volume

3

fYear

2000

fDate

29-31 May 2000

Firstpage

1210

Abstract

The present DC and AC model BSIM3v3 is not capable of HF-modeling short-channel MOSFETs accurately. With the addition of two parameters to the existing model, the quality of simulated small-signal parameters could be improved up to 20 GHz. Both a gate resistance and a substrate resistance were added to BSIM3v3. A new method to calculate the substrate resistance from small-signal parameters is presented and evaluated. Different techniques to determine both the gate resistance and the substrate resistance were compared and analyzed regarding their advantages and disadvantages.

Keywords

MOSFET; circuit simulation; electric resistance; semiconductor device models; software packages; BSIM3v3; HF circuit simulations; computer simulation; gate resistance; short channel MOSFETs modelling; simulated small-signal parameters; small-signal parameters; substrate resistance; CMOS technology; Circuit simulation; Electric resistance; Electrical resistance measurement; Equivalent circuits; Frequency; Geometry; Hafnium; MOSFETs; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 2000. MELECON 2000. 10th Mediterranean

Print_ISBN

0-7803-6290-X

Type

conf

DOI

10.1109/MELCON.2000.879753

Filename

879753