Title :
Ferroelectric MIM capacitors for compact high tunable filters
Author :
De Paolis, Rosa ; Payan, Sandrine ; Maglione, Mario ; Guegan, Guillaume ; Coccetti, Fabio
Author_Institution :
LAAS, Univ. de Toulouse, Toulouse, France
Abstract :
The voltage- and frequency-dependent material properties of (Ba,Sr)TiO3 (BST) thin film have been extracted up to 67 GHz by means of a lumped elements equivalent circuit validated by fitting on de-embedded experimental data. The tunability is 73% (0-10 V bias), and the loss tangent is better than 0.06 (value at 0 V at 1 GHz). This varactor has been exploited in the design of a compact tunable filter implemented by using coupled resonators in lumped element in silicon planar technology. This solution yields a very compact size, and experimental results show a filter center frequency tuning of 83% (997 MHz - 1830 MHz) while maintain almost constant the fractional bandwidth at 35% upon the application of a 0-10 V bias. The insertion loss is between 3.8 and 4.4 dB, and the return loss is better than 14 dB.
Keywords :
MIM devices; barium compounds; circuit tuning; coupled circuits; equivalent circuits; ferroelectric capacitors; resonator filters; silicon; strontium compounds; thin film capacitors; titanium compounds; varactors; (BaSr)TiO3; BST thin film; center frequency tuning; compact high tunable filter; coupled resonator; ferroelectric MIM capacitor; fractional bandwidth; frequency 997 MHz to 1830 MHz; frequency-dependent material property; insertion loss; loss 3.8 dB to 4.4 dB; loss tangent; lumped element equivalent circuit; metal-insulator-metal capacitor; return loss; silicon planar technology; varactor; voltage 0 V to 10 V; voltage-dependent material property; Band-pass filters; Equivalent circuits; MIM capacitors; Microwave circuits; Microwave filters; Resonator filters; equivalent circuits; ferroelectric materials; filters; tunable circuits and devices; varactor;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2015 IEEE 15th Topical Meeting on
DOI :
10.1109/SIRF.2015.7119878