Title :
Highly linear broadband GaN-based low-noise amplifier
Author :
Andrei, Cristina ; Liero, Armin ; Lossy, Richard ; Heinrich, Wolfgang ; Rudolph, Matthias
Author_Institution :
Dept. of RF & Microwave Tech., Brandenburg Univ. of Technol. Cottbus, Cottbus, Germany
Abstract :
A highly linear broadband low-noise amplifier is presented in this paper. The circuit is based on a GaN power transistor, directly bonded into a hybrid microstrip circuit. In order to achieve the highest linearity possible, a large device is used and biased in class A. Broadband low-noise operation in the range of 1.7 - 2.3 GHz is achieved, with a gain of about 15 dB and a noise figure below 2 dB, although matching of the large transistor cell is tedious. A record output IP3 of 49 dBm is measured for this device. This proves that the GaN technology is capable of combining extremely high linearity with low noise performance.
Keywords :
gallium compounds; low noise amplifiers; microstrip circuits; nitrogen; power transistors; wideband amplifiers; GaN; GaN power transistor; broadband low-noise operation; frequency 1.7 GHz to 2.3 GHz; highly linear broadband low-noise amplifier; hybrid microstrip circuit; Bonding; Circuits; Crosstalk; Gallium nitride; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; Packaging; Power transistors; Amplifier noise; Microwave FET amplifiers; Nonlinear Distortion; Robustness; Semiconductor device noise;
Conference_Titel :
Microwave Conference, 2010 German
Print_ISBN :
978-1-4244-4933-0
Electronic_ISBN :
978-3-9812668-1-8
