• DocumentCode
    3594591
  • Title

    Recent progress in high efficiency InGaN LEDs

  • Author

    Peter, M. ; Engl, K. ; Baumann, F. ; Wirth, R. ; Laubsch, A. ; Baur, J. ; Hahn, B.

  • Author_Institution
    OSRAM Opto Semicond. GmbH, Regensburg, Germany
  • fYear
    2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    InGaN LED efficiency depends significantly on current density, emission wavelength and junction temperature. Phosphor-converted blue LEDs are still more efficient than RGB multi-LED solutions despite inevitable Stokes losses: 104 lm/W at 350 mA have been demonstrated for a warm-white (TC = 2950 K) phosphor-converted blue InGaN LED with 1 mm2 chip size.
  • Keywords
    Current density; Light emitting diodes; Optical losses; Optical pumping; Packaging; Photonic band gap; Power generation; Semiconductor device measurement; Stimulated emission; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5500026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3594591