Vertically-Integrated Three-Dimensional SOI Photodetectors

We report on the design and measurement results of three-dimensional (3D) photo-detectors in a 0.18mum silicon-on-insulator technology. The photodiodes respond to light in the range of l-200,000lux with currents of 2fA to 300pA and can be arranged in a 3D stack. The phototransistors respond to light intensities of 5-200,000lux with currents from 50fA to 2.3muA. We also report spectral data obtained from the photodiode and show that a photodiode stack can be used to extract color information without the use of color filters. The data in this paper is essential to the design of advanced imaging arrays and color sensors in 3D SOI processes.