Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures

Author

Da Vi??, C. ; Bell, W.H. ; Berglund, P. ; Borchi, E. ; Borer, K. ; Bruzzi, M. ; Buontempo, S. ; Casagrande, L. ; Chapuy, S. ; Cindro, V. ; Dimcovski, Z. ; Ambrosio, N.D. ; de Boer, W. ; Dezillie, B. ; Esposito, Anna ; Granat, V. ; Grigoriev, E. ; Heijne,

Author_Institution

RD39 Collaboration, CERN, Geneva, Switzerland

Volume

1

fYear

1998

fDate

6/20/1905 12:00:00 AM

Firstpage

298

Abstract

The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to 2×10¹⁵ n/cm², was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated to 80°C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55% and 65% for the RA and NRA sample respectively. Similar CCE was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking

Keywords

annealing; cryogenics; neutron effects; silicon radiation detectors; 120 K; 150 K; 250 V; 283 K; 80 degC; Si; bias voltage; charge collection efficiency; cryogenic temperature; forward bias voltage; high resistivity Si detectors; large area particle tracking; low resistivity contacts; neutron irradiation; ohmic contacts; reverse annealing; reverse bias voltage; room temperature; Annealing; Charge measurement; Conductivity; Cryogenics; Current measurement; Detectors; Neutrons; Silicon; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-5021-9

Type

conf

DOI

10.1109/NSSMIC.1998.775148

Filename

775148