Title :
Material engineering in Cylindrical Surrounding Double Gate (CSDG) MOSFETs for enhanced electrostatic integrity and RF performance
Author :
Verma, Jay Hind K. ; Gupta, Mridula ; Haldar, Subhasis ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
This paper investigates influence of material engineering on the performance parameter of (Cylindrical Surrounding Double Gate) CSDG MOSFET for improvement in performance. CSDG MOSFETs are evaluated for various parameters such as surface potential, electric field, drain on current, off current, transconductance, cut-off frequency and total gate input capacitance. The comparison of the gate material engineering on CSDG MOSFET has been done on the normal CSDG MOSFET incorporating dual materials at gate electrode, using the ATLAS 3D device simulator. The result shows that, with incorporation of dual materials on the gate electrode, the device performance parameter improves by shifting the higher electric field and minimum surface potential more towards the source side than in the normal CSDG MOSFET.
Keywords :
MOSFET; electric fields; electrochemical electrodes; semiconductor device models; surface potential; ATLAS 3D device simulator; RF performance; cylindrical surrounding double gate MOSFET; dual materials; electric field; electrostatic integrity; gate electrode; gate material engineering; surface potential; Electric fields; Electric potential; Logic gates; MOSFET; Metals; Performance evaluation; Transconductance; CSDG MOSFET; cut-off frequency; dielectric constant; material engineering; transconductance;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151128
