Influence of growth paramaters on the crystallinity and stress of SiGe films grown by LPCVD

SiGe thin layers were deposited using LPCVD at different temperatures and pressures. The effect of the growth characteristics on the composition, grain growth and crystallinity were studied with the aim of maximizing the tensile stress of the films deposited. As expected, at constant reactant gas ratios, temperature had the maximum effect, with stress changing from compressive to tensile at higher temperatures. Films with high crystallinity and large grain sizes were produced at higher temperatures and higher pressures.