DocumentCode
3596754
Title
Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias
Author
Inoue, Fumihiro ; Philipsen, Harold ; van der Veen, Marleen H. ; Vandersmissen, Kevin ; Van Huylenbroeck, Stefaan ; Struyf, Herbert ; Tanaka, Tetsu
Author_Institution
Imec, Leuven, Belgium
fYear
2014
Firstpage
1
Lastpage
4
Abstract
High aspect ratio through-Si vias (AR=16.7) filling has been achieved by using non-PVD seed metallization approach. We demonstrate the formation of conformal and thin electroless deposited Cu seed on Ru liner. The optimized ELD Cu process was conducted at room temperature on activated Ru surface, which can improve the ELD bath life time. The deposited Cu with 2,2´ bipyridyl shows smoother and higher purity inside the Cu film.
Keywords
copper; electroless deposition; integrated circuit metallisation; ruthenium; three-dimensional integrated circuits; vias; Cu; ELD copper process; Ru; copper seeding; electroless deposition; high aspect ratio through-silicon vias; non-PVD seed metallization approach; room temperature; ruthenium liner; Annealing; Chemicals; Films; Metallization; Surface cleaning; Through-silicon vias; Cu seed; Elecroless deposition; High aspect ratio; Metallization; Through-Si Via;
fLanguage
English
Publisher
ieee
Conference_Titel
3D Systems Integration Conference (3DIC), 2014 International
Type
conf
DOI
10.1109/3DIC.2014.7152147
Filename
7152147
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