Analysis of 3D interconnect performance: Effect of the Si substrate resistivity

3D technologies provide promising solutions to meet the needs of today´s high performance and high speed ICs. Therefore, a methodology is required to model, predict, and optimize the 3D interconnect performance. This paper focuses on modeling of the performance of 3D interconnect test structures, realized on Si substrates, both in the time frequency domains. In particular, the impact of the Si substrate resistivity is analyzed based on a calibrated model.