• DocumentCode
    3596790
  • Title

    Thermal effects of heterogeneous interconnects on InP / GaN / Si diverse integrated circuits

  • Author

    Harris, T. Robert ; Franzon, Paul ; Davis, W. Rhett ; Lee Wang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The DAPRA Diverse Accessible Heterogeneous Integration (DAHI) initiative seeks to build capability in production of integrated semiconductor circuits of differing materials. Integration of materials such as GaN, InP, SiGe, and Si is a natural extension of the 3D-IC perspective and provides a unique solution for high performance circuits. In this approach, application of a component is no longer dependent on semiconductor material selection. In this paper, preliminary results are presented which examine the thermal performance of the technology. A thermal analysis prototype solution in Mentor Graphics® Calibre® provides surface heat maps based on IC layout, material property, and geometric configuration files. Chiplets are connected by heterogeneous interconnect (HIC). Differences in thermal performance of GaN and InP chiplets are explored by varying the number of HICs. Two methods for building up the model of a test chip are compared. One method automatically places discrete blocks in the model to represent HICs, while the other uses thermal material properties extracted from the layout.
  • Keywords
    Ge-Si alloys; gallium compounds; indium compounds; integrated circuit interconnections; integrated circuit layout; monolithic integrated circuits; 3D-IC; DAPRA diverse accessible heterogeneous integration; IC layout; InP-GaN-Si; Mentor Graphics Calibre; SiGe; chiplets; diverse integrated circuits; geometric configuration files; heterogeneous interconnects; integrated semiconductor circuits; material property; semiconductor material selection; surface heat maps; thermal analysis; thermal effects; thermal material properties; CMOS integrated circuits; Conductivity; Gallium nitride; III-V semiconductor materials; Indium phosphide; Semiconductor device modeling; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    3D Systems Integration Conference (3DIC), 2014 International
  • Type

    conf

  • DOI
    10.1109/3DIC.2014.7152182
  • Filename
    7152182