DocumentCode
3597040
Title
Infrared emitter diffusion using thin and heavily-doped phosphorus source layers
Author
Voyer, C. ; Tarr, N.G. ; Thomas, R.E. ; Varma, S.
Author_Institution
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Volume
2
fYear
2003
Firstpage
1415
Abstract
Phosphorus diffusion in an infrared conveyor belt furnace is a common method of forming the emitter of wafer-based Si solar cells. Here diffusion was performed using thinner source layers (<65 nm) of higher concentration (>3/spl times/10/sup 21/ P/cm/sup 3/) than in common practice (thickness >100 nm, [P] \n\n\t\t
Keywords
diffusion; elemental semiconductors; etching; furnaces; phosphorus; silicon; solar cells; Si:P; TSUPREM-4 software simulation; chemical emissions; etching; four point probe measurements; heavily doped phosphorus source layers; infrared conveyor belt furnace; infrared emitter diffusion; phosphorus diffusion; resistance analysis; thin layers; wafer based Si solar cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306188
Link To Document