Investigation of a-SiOx:H films as passivation layer in heterojunction interface

Author

Che-Hung Yeh ; Yen-Ho Chu ; Chien-Chieh Lee ; Yu-Lin Hsieh ; Shian-Ming Liu ; Jenq-Yang Chang ; I-Chen Chen ; Li, Tomi T.

Author_Institution

Dept. of Mech. Eng., Nat. Central Univ., Chungli, Taiwan

fYear

2015

Firstpage

1

Lastpage

3

Abstract

In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High density plasma of ECR-CVD has many advantages: (1) faster deposition rate, (2) no electrode contamination, (3) low ion bombardment. The process parameters effect on a-SiOx:H thin films such as dilution ratio was investigated. In addition, this material will be applied to amorphous silicon / crystalline silicon heterojunction solar cells and improved the open-circuit voltage of solar cells.

Keywords

chemical vapour deposition; cyclotron resonance; passivation; semiconductor thin films; silicon compounds; solar cells; SiO; amorphous silicon heterojunction solar cells; crystalline silicon heterojunction solar cells; dilution ratio; electron cyclotron resonance chemical vapor deposition; heterojunction interface; high density plasma; intrinsic hydrogenated amorphous silicon oxide thin films; open-circuit voltage; passivation layer; process parameters; Annealing; Etching; Hydrogen; ISO standards; Optics; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153397

Filename

7153397