DocumentCode :
3598580
Title :
A New Anisotropic Etching of N+ Poly-Si Using XeCl Excimer Laser Beam
Author :
Okano, H. ; Sekine, M. ; Horiike, Y.
Author_Institution :
Toshiba VLSI Research Center, Toshiba Corp. 1, Toshiba-cho, Saiwaiku, Kawasaki, Japan 210
fYear :
1984
Firstpage :
74
Lastpage :
75
Keywords :
Anisotropic magnetoresistance; Etching; Gas lasers; Laser beams; Lithography; Mercury (metals); Protection; Surface emitting lasers; Surface waves; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Print_ISBN :
4-930813-08-5
Type :
conf
Filename :
4480706
Link To Document :
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