A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors

Author

Petasecca, Marco ; Moscatelli, Francesco ; Passeri, Daniele ; Pignatel, Giorgio Umberto ; Scarpello, Carlo ; Caprai, Giovanni

Author_Institution

Perugia Univ.

Volume

3

fYear

2005

Firstpage

1490

Lastpage

1493

Abstract

In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of 10¹⁶ n/cm². In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. The behaviour of the silicon devices at a fluence of 10¹⁶ n/cm² shows better results in terms of charge collection efficiency using a p-type silicon detector

Keywords

numerical analysis; position sensitive particle detectors; radiation hardening; silicon radiation detectors; charge collection efficiency; electrical characteristics; heavily irradiated n-type silicon detector; heavily irradiated p-type silicon detector; numerical simulation; p-type substrates; radiation hardness; silicon devices; Doping; Large Hadron Collider; Lattices; Leakage current; Numerical simulation; Radiation detectors; Semiconductor process modeling; Silicon devices; Silicon radiation detectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2005 IEEE

ISSN

1095-7863

Print_ISBN

0-7803-9221-3

Type

conf

DOI

10.1109/NSSMIC.2005.1596601

Filename

1596601