Title :
Experiment and Simulation of the Nonlinear and Transient Responses of GaAs PHEMT Injected With Microwave Pulses
Author :
Cunbo Zhang ; Honggang Wang ; Jiande Zhang ; Guangxing Du
Author_Institution :
Nat. Univ. of Defense Technol., Changsha, China
Abstract :
The nonlinear and transient responses of gallium arsenide pseudomorphic high electron mobility transistor (GaAs PHEMT) injected with microwave pulses are studied in this paper. The experimental research results show that the feature of the output power of the GaAs PHEMT is from linear increase to saturation to linear increase again as the input power increases; and the feature of the measured output time domain waveforms is from linearity to saturation to reversion as the input power increases. The simulation model for analyzing the GaAs PHEMT with microwave pulses is established by TCAD. The nonlinear feature of GaAs PHEMT analyzed through simulation is consistent with measurement. In addition, the field, current density, and temperature distribution inside the transistor injected with microwave pulses are discussed.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave transistors; technology CAD (electronics); PHEMT; TCAD; current density; microwave pulses; nonlinear responses; pseudomorphic high electron mobility transistor; temperature distribution; transient responses; Gallium arsenide; Logic gates; Microwave circuits; Microwave oscillators; Microwave transistors; PHEMTs; GaAs PHEMT; injection experiment; microwave pulse; nonlinear and transient; temperature inside transistor; temperature inside transistor.;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.2015.2410491