Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects

Author

Piersanti, Stefano ; De Paulis, Francesco ; Orlandi, Antonio ; Swaminathan, Madhavan ; Ricchiuti, Vittorio

Author_Institution

Dept. of Ind. & Inf. Eng. & Econ., Univ. of L´Aquila, L´Aquila, Italy

Volume

57

Issue

5

fYear

2015

Firstpage

1216

Lastpage

1225

Abstract

An equivalent circuit model for the transient analysis of through-silicon vias (TSV) taking into account nonlinear metal-oxide-semiconductor effects is proposed. The model takes into account the nonlinear behavior of the doped silicon substrate in presence of the electric potential difference due to the transient voltage between the TSVs. The impact of time-variant capacitance between the via and the substrate on crosstalk and signal propagation is analyzed.

Keywords

MOS capacitors; elemental semiconductors; equivalent circuits; semiconductor doping; silicon; three-dimensional integrated circuits; transient analysis; Si; TSV equivalent circuit; crosstalk; doped silicon substrate; equivalent circuit model; nonlinear MOS capacitance effects; nonlinear metal-oxide-semiconductor effects; signal propagation; through-silicon vias; time-variant capacitance; transient analysis; Capacitance; Equivalent circuits; Integrated circuit modeling; Mathematical model; Silicon; Substrates; Through-silicon vias; Crosstalk; TSV equivalent circuits; nonlinear capacitance; signal integrity; through-silicon vias (TSV); transient analysis;

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/TEMC.2015.2414477

Filename

7073622