Title :
Power Loss, System Efficiency, and Leakage Current Comparison Between Si IGBT VFD and SiC FET VFD With Various Filtering Options
Author :
Swamy, Mahesh M. ; Jun-Koo Kang ; Shirabe, Kohei
Author_Institution :
Yaskawa America, Inc., Waukegan, IL, USA
Abstract :
SiC devices are gaining acceptance in the motor drive industry. This paper compares the power loss and efficiency between two options that can be used with SiC-based variable frequency drives (VFDs). In the first option, the SiC VFD is equipped with an output sine-wave filter with carrier frequency at 50 kHz. A dv/dt filter is used for the second option with the carrier frequency reduced to 8 kHz. Both options are compared with a standard Si insulated-gate bipolar transistor (IGBT) VFD operating at a carrier frequency of 8 kHz with no output filter. The focus of this paper is to present different filtering options for SiC VFDs. The dv/dt filter is designed to meet the same specification as that of the standard Si IGBT VFD with no output filter, so as to present a fair comparison between a standard Si IGBT VFD and the next-generation SiC VFD. Results using a 460-V 11-kW system show that the SiC VFD with an output sine-wave filter has a lower efficiency compared with SiC VFD with a dv/dt filter. Influence of the various filtering options on leakage current in the motor drive system has also been studied, and the results are presented in this paper.
Keywords :
field effect transistors; insulated gate bipolar transistors; leakage currents; motor drives; power filters; silicon; silicon compounds; variable speed drives; Si; Si IGBT VFD device; SiC; SiC FET VFD device; carrier frequency; frequency 50 kHz; frequency 8 kHz; insulated gate bipolar transistor; leakage current; motor drive industry; motor drive system efficiency; next generation SiC VFD; output sine wave filter; power 11 kW; power loss; variable frequency drive; voltage 460 V; AC motors; Inductance; Inductors; Insulated gate bipolar transistors; Resonant frequency; Silicon; Silicon carbide; $dv/dt$ filter for SiC variable-frequency drive (VFD); Efficiency comparison between SiC and Si-IGBT VFDs; Filtering options for high speed power switches; High-speed power semiconductor devices; Sine filter for SiC VFD; dv/dt filter for SiC VFD; efficiency comparison between SiC and Si insulated-gate bipolar transistor (IGBT) VFDs; filtering options for high-speed power switches; high-speed power semiconductor devices; sine filter for SiC VFD;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2015.2420616
