Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

Author

Miao Xu ; Huilong Zhu ; Lichuan Zhao ; Huaxiang Yin ; Jian Zhong ; Junfeng Li ; Chao Zhao ; Dapeng Chen ; Tianchun Ye

Author_Institution

Inst. of Microelectron., Beijing, China

Volume

36

Issue

7

fYear

2015

fDate

7/1/2015 12:00:00 AM

Firstpage

648

Lastpage

650

Abstract

In this letter, for the first time, a novel vertical implantation is introduced in bulk FinFETs and used to form self-aligned halo and punch-through stop pocket (PTSP) at the same time. This implantation is carried out after dummy gate removal in the all-last high-k /metal gate process. The formed halo and PTSP doping profiles improve short channel effect control and reduce V_TH variation. The process window related to the implantation is also discussed. This vertical implantation method is simple, effective, and has potential for future application of massive manufacture.

Keywords

MOSFET; doping profiles; high-k dielectric thin films; PTSP doping profiles; all-last high-k-metal gate process; bulk FinFET; dummy gate removal; improved short channel effect control; process window; punch-through stop pocket; self-aligned halo; threshold voltage variation reduction; vertical implantation method; CMOS integrated circuits; Doping profiles; FinFETs; Ions; Logic gates; Semiconductor process modeling; Bulk FinFETs; Halo; Monte Carlo (MC); bulk FinFETs; halo; punch through stop pocket (PTSP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2434825

Filename

7109837