A Solid-State Thin-Film Incandescent Light-Emitting Device

Author

Yue Kuo

Author_Institution

Thin Film Nano & Microelectron. Res. Lab., Texas A&M Univ., College Station, TX, USA

Volume

62

Issue

11

fYear

2015

Firstpage

3536

Lastpage

3540

Abstract

A new type of solid-state thin-film white light-emitting device has been reviewed and discussed. Light is emitted due to thermal excitation of the nano-sized conductive paths formed after the dielectric breakdown of the amorphous metal oxide thin film deposited on a silicon wafer. The mechanism of light emission, optical characteristics, reliability, driving methods, and efficiency are discussed. The complete device is made of the IC-compatible materials and process.

Keywords

electric breakdown; elemental semiconductors; integrated optoelectronics; light emitting diodes; silicon; thin film devices; IC-compatible materials; Si; amorphous metal oxide thin film; dielectric breakdown; driving methods; efficiency; light emission; nanosized conductive paths; optical characteristics; reliability; silicon wafer; solid-state thin-film incandescent light emitting device; thermal excitation; Dielectric breakdown; Dielectrics; Hafnium compounds; High K dielectric materials; Light emitting diodes; Nanocrystals; Optoelectronic devices; semiconductor devices; silicon photonics; thin-film devices; thin-film devices.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2435652

Filename

7118679