• DocumentCode
    3602853
  • Title

    Anisotropic AC Magnetic Susceptibility in (Ga,Mn)As Films

  • Author

    Xiang Li ; Sining Dong ; Taehee Yoo ; Xinyu Liu ; Sanghoon Lee ; Furdyna, Jacek K. ; Dobrowolska, Margaret

  • Author_Institution
    Dept. of Phys., Univ. of Notre Dame, Notre Dame, IN, USA
  • Volume
    51
  • Issue
    11
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We report a systematic investigation of ac magnetic susceptibility in (Ga,Mn)As films as a function of temperature and magnetic field, carried out in parallel with dc magnetization measurements. The temperature dependence of ac susceptibility χac shows anisotropic behavior: 1) a single peak in χac is observed close to T for the [11̅0] orientation of the driving ac field; 2) a single peak is also seen close to 22 K for the field along [110]; and 3) peaks at both these temperatures are observed for the field applied along [100]. A detailed analysis of the ac and dc data unambiguously indicates that the peak near T is related to the paramagnetic-to-ferromagnetic phase transition, with the ferromagnetic domains nucleating with their easy axes aligned with the [11̅0] direction, providing a clear picture of uniaxial domain behavior near T . The peak near 22 K, on the other hand, is related to the onset of biaxial domain structure in (Ga,Mn)As induced by the competition between uniaxial and cubic anisotropy. More specifically, the ac susceptibility peak near TC involves 180° magnetization flips along the [11̅0] easy axis of the domains, while the peak near 22 K originates from magnetization wobbling between two biaxial easy axes separated by a small angle.
  • Keywords
    III-V semiconductors; ferromagnetic materials; ferromagnetic-paramagnetic transitions; gallium arsenide; magnetic anisotropy; magnetic domains; magnetic semiconductors; magnetic susceptibility; magnetic thin films; manganese compounds; nucleation; semiconductor thin films; (GaMn)As; (GaMn)As films; [11̅0] orientation; anisotropic AC magnetic susceptibility; biaxial domain structure; cubic anisotropy; dc magnetization measurements; ferromagnetic domains; ferromagnetic semiconductor; magnetic field; magnetization flips; magnetization wobbling; nucleation; paramagnetic-ferromagnetic phase transition; temperature dependence; temperature field; uniaxial domain behavior; Films; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Magnetic susceptibility; Magnetization; Temperature measurement; Ferromagnetic semiconductors; magnetic anisotropy; magnetic domains; magnetic domains and magnetic susceptibility; magnetic susceptibility;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2015.2442513
  • Filename
    7118705