DocumentCode :
3602966
Title :
Reduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure
Author :
Huan Ting Chen ; Yuk Fai Cheung ; Hoi Wai Choi ; Siew Chong Tan ; Hui, S.Y.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Volume :
62
Issue :
11
fYear :
2015
Firstpage :
6925
Lastpage :
6933
Abstract :
In this paper, a GaN light-emitting diode (LED) with sapphire structure and a thin-film LED without sapphire structure are characterized in the photo electrothermal modeling framework for comparison. Starting from the analysis and modeling of internal quantum efficiency as a function of current and temperature of blue LED, this work develops the thin-film LED device model and derives its optical power and the heat dissipation coefficient. The device parameters of the two LED devices with different structural designs are then compared. Practical optical power measurements are compared with theoretical predictions based on the two types of fabricated devices. It is shown that the thin-film LED device has much lower thermal resistance and optical power loss.
Keywords :
III-V semiconductors; cooling; gallium compounds; light emitting diodes; optical losses; thermal resistance; wide band gap semiconductors; LED; heat dissipation coefficient; internal quantum efficiency; optical power; optical power loss; photoelectrothermal modeling; thermal resistance; thin-film light-emitting diode; Gallium nitride; Heating; Light emitting diodes; Optical variables measurement; Temperature; Temperature measurement; Thermal resistance; Light-emitting diodes; Light-emitting diodes (LEDs); Photo-electro-thermal theory; Thin-Film; photo-electro-thermal theory; thin-film;
fLanguage :
English
Journal_Title :
Industrial Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0046
Type :
jour
DOI :
10.1109/TIE.2015.2443106
Filename :
7120978
Link To Document :
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