• DocumentCode
    3603545
  • Title

    Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

  • Author

    Burr, Geoffrey W. ; Shelby, Robert M. ; Sidler, Severin ; di Nolfo, Carmelo ; Junwoo Jang ; Boybat, Irem ; Shenoy, Rohit S. ; Narayanan, Pritish ; Virwani, Kumar ; Giacometti, Emanuele U. ; Kurdi, Bulent N. ; Hyunsang Hwang

  • Author_Institution
    IBM Res. - Almaden, San Jose, CA, USA
  • Volume
    62
  • Issue
    11
  • fYear
    2015
  • Firstpage
    3498
  • Lastpage
    3507
  • Abstract
    Using two phase-change memory devices per synapse, a three-layer perceptron network with 164 885 synapses is trained on a subset (5000 examples) of the MNIST database of handwritten digits using a backpropagation variant suitable for nonvolatile memory (NVM) + selector crossbar arrays, obtaining a training (generalization) accuracy of 82.2% (82.9%). Using a neural network simulator matched to the experimental demonstrator, extensive tolerancing is performed with respect to NVM variability, yield, and the stochasticity, linearity, and asymmetry of the NVM-conductance response. We show that a bidirectional NVM with a symmetric, linear conductance response of high dynamic range is capable of delivering the same high classification accuracies on this problem as a conventional, software-based implementation of this same network.
  • Keywords
    backpropagation; multilayer perceptrons; phase change memories; MNIST database; NVM-conductance response; backpropagation; handwritten digit; large-scale neural network; neural network simulator; nonvolatile memory; phase-change memory device; selector crossbar array; synaptic weight element; three-layer perceptron network; Accuracy; Artificial neural networks; Neurons; Nonvolatile memory; Performance evaluation; Phase change materials; Training; Artificial neural networks; Machine learning; Multilayer perceptrons; Nonvolatile memory; Phase change memory;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2439635
  • Filename
    7151827