RC-Embedded LDMOS-SCR With High Holding Current for High-Voltage I/O ESD Protection

Author

Hailian Liang ; Xiaofeng Gu ; Shurong Dong ; Liou, Juin J.

Author_Institution

Dept. of Electron. Eng., Jiangnan Univ., Wuxi, China

Volume

15

Issue

4

fYear

2015

Firstpage

495

Lastpage

499

Abstract

A novel lateral diffusion MOS-embedded silicon-controlled rectifier with a high holding current (LDMOS-SCR-HHC) is proposed and verified in a 0.25-μm 18-V Bipolar-CMOS-DMOS process. By adding an imbedded P+ region located next to the source region of an LDMOS-SCR and connecting the P+ region to the gate, the LDMOS-SCR-HHC exhibits a relatively HHC, small trigger voltage, and strong electrostatic discharge (ESD) robustness. As such, the proposed LDMOS-SCR-HHC is an attractive device for constructing effective and latch-up immune ESD protection solutions for high-voltage I/O ports.

Keywords

CMOS integrated circuits; electrostatic discharge; thyristors; ESD robustness; LDMOS-SCR-HHC; RC-embedded LDMOS-SCR; bipolar-CMOS-DMOS process; electrostatic discharge robustness; high-holding current; high-voltage I-O ESD protection; imbedded P+ region; latch-up immune ESD protection solution; lateral diffusion MOS-embedded silicon-controlled rectifier; size 0.25 mum; source region; trigger voltage; voltage 18 V; Electrostatic discharges; Logic gates; Materials reliability; Object recognition; Robustness; Threshold voltage; Thyristors; Electrostatic discharge (ESD); failure current; holding current; lateral diffusion metal-oxide semiconductor (LDMOS); silicon-controlled rectifier (SCR); trigger voltage;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2015.2463120

Filename

7173426