DocumentCode :
3604120
Title :
High Performance Ridge Type PLZT Optical Switch With Offset Upper Electrode
Author :
Guohua Hu ; Zhipeng Qi ; Binfeng Yun ; Ruohu Zhang ; Zhuyuan Wang ; Yiping Cui
Author_Institution :
Adv. Photonics Center, Southeast Univ., Nanjing, China
Volume :
27
Issue :
21
fYear :
2015
Firstpage :
2257
Lastpage :
2259
Abstract :
(Pb,La)(Zr,Ti)O3 (PLZT) has a high electro-optical coefficient and is very attractive for optical waveguide switches with high speed, low driving voltage, and compact size. The 1 × 2 PLZT optical switch using ridge type Mach-Zehnder interference structure has been designed and fabricated. By introducing offset upper electrodes instead of the conventional top electrodes, the insertion loss of the fabricated 1 × 2 PLZT optical switch was decreased 9.8 dB significantly with a crosstalk of -25.3 dB and the driving voltage <;10 V.
Keywords :
electro-optical effects; electro-optical switches; lanthanum compounds; lead compounds; light interference; optical crosstalk; optical design techniques; optical fabrication; optical losses; optical waveguides; ridge waveguides; PLZT; compact size; driving voltage; electro-optical coefficient; high performance ridge type PLZT optical switch; insertion loss; offset upper electrode; optical crosstalk; optical waveguide switches; ridge type Mach-Zehnder interference structure; Electrodes; Electrooptical waveguides; Optical crosstalk; Optical device fabrication; Optical films; Optical switches; Multimode Interference (MMI); Optical Switches; PLZT; offset upper electrode;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2015.2459715
Filename :
7174461
Link To Document :
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