DocumentCode :
3604206
Title :
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM
Author :
Puglisi, F.M. ; Wenger, C. ; Pavan, P.
Author_Institution :
Dipt. di Ing. Enzo Ferrari, Univ. di Modena e Reggio Emilia, Modena, Italy
Volume :
36
Issue :
10
fYear :
2015
Firstpage :
1030
Lastpage :
1032
Abstract :
In this letter, we propose a dispersion-aware program-verify algorithm to enable reliable multi-bit operations in HfO2-based RRAM. The significant intrinsic dispersion of the resistive states, typically hindering multi-bit operations, is exploited to devise a program-verify scheme which enables the multi-bit operations with unique properties of failure resilience and adaptability to degradation. We show that an appropriate choice of the algorithm parameters can minimize the average number of cycles needed to program the cell, enabling fast and reliable multi-bit operation. This maximizes the bit/cell ratio and minimizes the dispersion of targeted resistive states.
Keywords :
hafnium compounds; resistive RAM; HfO2-based RRAM; HfO2; bit-cell ratio; degradation adaptability; dispersion-aware program-verify algorithm; failure resilience; intrinsic dispersion; program-verify scheme; reliable multi-bit operations; targeted resistive states dispersion; Degradation; Dispersion; Hafnium compounds; Performance evaluation; Reliability; Resistance; Switches; Multi-bit; Program-Verify; RRAM; Resistive Switching; Variability; multi-bit; program-verify; resistive switching; variability;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2464256
Filename :
7177062
Link To Document :
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