• DocumentCode
    3604446
  • Title

    The Resistive-Reactive Class-J Power Amplifier Mode

  • Author

    Friesicke, Christian ; Quay, Rudiger ; Jacob, Arne F.

  • Author_Institution
    Inst. fur Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Hamburg, Germany
  • Volume
    25
  • Issue
    10
  • fYear
    2015
  • Firstpage
    666
  • Lastpage
    668
  • Abstract
    This letter introduces a theory which considers the effect of lossy second-harmonic terminations on the voltage waveform, output power, and efficiency of power amplifiers (PAs) operated in the class-J mode. To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive class-J mode with complex fundamental and second-harmonic load impedances. The theory is experimentally validated by performing on-wafer active load-pull measurements on an AlGaN/GaN HEMT power device with 0.25 μm gate length and a total gate periphery of 6×200 μm. The measured waveforms are de-embedded to the internal current-generator of the device, where they exhibit the theoretically predicted behavior.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT power device; internal current-generator; lossy second-harmonic terminations; on-wafer active load-pull measurements; resistive-reactive class-J power amplifier mode; second-harmonic load impedances; size 0.25 mum; voltage waveform; Current measurement; Frequency conversion; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Voltage measurement; Class-J; losses; power amplifiers (PAs);
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2015.2463211
  • Filename
    7185478