DocumentCode
3604446
Title
The Resistive-Reactive Class-J Power Amplifier Mode
Author
Friesicke, Christian ; Quay, Rudiger ; Jacob, Arne F.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Hamburg, Germany
Volume
25
Issue
10
fYear
2015
Firstpage
666
Lastpage
668
Abstract
This letter introduces a theory which considers the effect of lossy second-harmonic terminations on the voltage waveform, output power, and efficiency of power amplifiers (PAs) operated in the class-J mode. To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive class-J mode with complex fundamental and second-harmonic load impedances. The theory is experimentally validated by performing on-wafer active load-pull measurements on an AlGaN/GaN HEMT power device with 0.25 μm gate length and a total gate periphery of 6×200 μm. The measured waveforms are de-embedded to the internal current-generator of the device, where they exhibit the theoretically predicted behavior.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT power device; internal current-generator; lossy second-harmonic terminations; on-wafer active load-pull measurements; resistive-reactive class-J power amplifier mode; second-harmonic load impedances; size 0.25 mum; voltage waveform; Current measurement; Frequency conversion; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Voltage measurement; Class-J; losses; power amplifiers (PAs);
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2015.2463211
Filename
7185478
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