• DocumentCode
    3604575
  • Title

    Hydrogen Sensing Properties of Copper-Doped Zinc Oxide Thin Films

  • Author

    Kumar Malik, Rajesh ; Khanna, Rajesh ; Lal Sharma, Ganpat ; Pullockaran Pavunny, Shojan ; Katiyar, Ram S.

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Thapar Univ., Patiala, India
  • Volume
    15
  • Issue
    12
  • fYear
    2015
  • Firstpage
    7021
  • Lastpage
    7028
  • Abstract
    A highly sensitive hydrogen gas sensor has been developed utilizing 3% copper-doped zinc oxide thin films. These films were deposited using pulsed laser deposition technique on quartz substrates with predeposited interdigitated platinum electrodes. The deposited films were characterized by X-ray diffraction and atomic force microscopy. The hydrogen sensing properties of the sensor were studied at three operating temperatures, viz., 50 °C, 100 °C, and 150 °C. We observed that the sensor shows good performance even at a low operating temperature of 50 °C for a very small concentration of hydrogen (10 ppm).
  • Keywords
    II-VI semiconductors; X-ray diffraction; atomic force microscopy; copper; electrodes; gas sensors; hydrogen; platinum; pulsed laser deposition; semiconductor thin films; wide band gap semiconductors; zinc compounds; H2; Pt; SiO2; X-ray diffraction; ZnO:Cu; atomic force microscopy; copper-doped zinc oxide thin films; hydrogen sensing properties; interdigitated platinum electrodes; pulsed laser deposition technique; quartz substrates; temperature 50 degC to 150 degC; Gas detectors; Hydrogen; II-VI semiconductor materials; Temperature measurement; Temperature sensors; Zinc oxide; Hydrogen sensor; Zinc oxide; hydrogen sensor; pulsed laser deposition; thin film; zinc oxide;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2015.2469141
  • Filename
    7206528