A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation

Author

Ying-Yu Chen ; Sangai, Amit ; Rogachev, Artem ; Gholipour, Morteza ; Iannaccone, Giuseppe ; Fiori, Gianluca ; Deming Chen

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

Volume

14

Issue

6

fYear

2015

Firstpage

1068

Lastpage

1082

Abstract

This paper presents the first parameterized SPICE-compatible compact model of a graphene nano-ribbon field-effect transistor (GNRFET) with doped reservoirs, also known as MOS-type GNRFET. The current and charge models closely match numerical TCAD simulations. In addition, process variation in transistor dimension, line edge roughness, and doping level in the reservoirs are accurately modeled. Our model provides a means to analyze delay and power of graphene-based circuits under process variation, and offers design and fabrication insights for graphene circuits in the future. We show that line edge roughness severely degrades the advantages of GNRFET circuits; however, GNRFET is still a good candidate for low-power applications.

Keywords

MOSFET; SPICE; graphene devices; nanoribbons; semiconductor device models; technology CAD (electronics); MOS-type GNRFET; MOS-type graphene nanoribbon field-effect transistors; SPICE-compatible model; charge models; circuit-level delay; doped reservoirs; doping level; gate-level delay; graphene-based circuits; line edge roughness; numerical TCAD simulations; power analysis; process variation; transistor dimension; Field effect transistors; Graphene; Integrated circuit modeling; Mathematical model; SPICE; GNRFET; Graphene; SPICE; graphene; graphene nano-ribbon; model; transistor;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2015.2469647

Filename

7208877