Title :
Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In–Ga–Zn–O as Electrode
Author :
Xiaobing Yan ; Erpeng Zhang ; Hua Hao ; Yingfang Chen ; Gang Bai ; Qi Liu ; Jianzhou Lou ; Baoting Liu ; Xiaoting Li
Author_Institution :
Key Lab. of Digital Med. Eng. of Hebei Province, Hebei Univ., Baoding, China
Abstract :
We report a highly transparent bipolar resistive random access memory device fabricated by radio frequency magnetron sputtering based on Zr0.5Hf0.5O2 films with an amorphous semiconducting In-Ga-Zn-O films as electrode. The fabricated device gets a high average transmittance of 87.1% in the visible region. We examine the conduction mechanism and calculated the Schottky barrier height at room temperature according to the I-V characteristics. The relaxation behavior of the resistance transients indicates that the oxygen vacancies in the films play an important role in the resistive switching (RS) behaviors. In addition, we demonstrated the schematic energy band diagram to illustrate the RS mechanism.
Keywords :
amorphous semiconductors; bipolar memory circuits; resistive RAM; sputter deposition; zirconium compounds; InGaZnO; Schottky barrier height; Zr0.5Hf0.5O2; amorphous semiconductors; bipolar resistive random access memory device; conduction mechanism; highly transparent bipolar resistive switching memory; oxygen vacancies; radio frequency magnetron sputtering; resistance transients; schematic energy band diagram; Electrodes; Nonvolatile memory; Random access memory; Resistance; Schottky barriers; Switches; Transient analysis; Relaxation behavior; Zr₀.₅Hf₀.₅O₂.; Zr0.5Hf0.5O2; resistive switching (RS) mechanism; transparent resistive random access memory (TRRAM);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2461662
