DocumentCode :
3604878
Title :
A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit
Author :
Fei Liu ; Yijiao Wang ; Xiaoyan Liu ; Jian Wang ; Hong Guo
Author_Institution :
Dept. of Phys., Univ. of Hong Kong, Hong Kong, China
Volume :
36
Issue :
10
fYear :
2015
Firstpage :
1091
Lastpage :
1093
Abstract :
Device performance of monolayer MoS2 transistors is investigated by atomistic simulations within the non-equilibrium Green´s function formalism. A strong dependence of quantum transport on MoS2 orientation is predicted. To a large extent, the orientation dependence is due to subband transport properties and the atomistic structure along the transport direction. A bandgap is found in the conduction band along armchair direction (AD), which plays a major role for the orientation-dependent transport. At the same time, different atomic arrangements along AD and zigzag direction have different depletion region lengths, which also contribute to the orientation-dependent transport. Orientation dependence of drain current exists in MoS2 FETs having different gate lengths.
Keywords :
Green´s function methods; field effect transistors; molybdenum compounds; semiconductor device models; MoS2; armchair direction; atomic arrangements; atomistic simulations; bandgap; conduction band; depletion region lengths; device performance; drain current; gate lengths; monolayer MoS2 transistors; non-equilibrium Green´s function formalism; orientation dependence; orientation-dependent transport; quantum transport; subband transport properties; transport direction; Atomic layer deposition; Current density; Field effect transistors; Logic gates; Performance evaluation; Tunneling; Field effect transistor; MoS2; Orientation dependence; orientation dependence;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2472297
Filename :
7219427
Link To Document :
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