DocumentCode :
3605018
Title :
An Equivalent Circuit Model With Current Return Path Effects for ON-Chip Interconnect up to 80 GHz
Author :
Yukun Zhu ; Kai Kang ; Yunqiu Wu ; Chenxi Zhao ; Yong-Ling Ban ; Jinhong Guo ; Ling Ling Sun ; Wen-Yan Yin ; Quan Xue
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume :
5
Issue :
9
fYear :
2015
Firstpage :
1320
Lastpage :
1330
Abstract :
A lumped-element model for ON-chip interconnects is proposed in this paper. The effect of current return path of interconnects is analyzed. An efficient analytical parameter extraction method for the model is proposed. The inductor Lg was adopted in the shunt branch of this model to characterize the induced time-varying magnetic field. Thus, the bandwidth of the model is extended over the resonance frequency. A group of interconnects with different structures were fabricated in a 0.18-μm CMOS process to investigate the effects of current return path. The good agreement of S-parameters between the model and measurements suggests that the proposed model can accurately predict the performance of interconnect in a wide frequency band up to 80 GHz, even over the resonance frequency.
Keywords :
CMOS integrated circuits; S-parameters; equivalent circuits; integrated circuit interconnections; lumped parameter networks; CMOS process; ON-chip interconnect; S-parameters; current return path effects; equivalent circuit model; induced time-varying magnetic field; lumped-element model; resonance frequency; shunt branch; size 0.18 mum; Analytical models; Capacitance; Integrated circuit interconnections; Integrated circuit modeling; Mathematical model; Metals; System-on-chip; Compact model; ON-chip interconnect; equivalent circuit model; millimeter wave; wideband; wideband.;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2015.2448572
Filename :
7226794
Link To Document :
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