DocumentCode :
3605023
Title :
Narrow Ridge 
- 
Cascade Diode Lasers With Output Power Above 100 mW at Room
Author :
Rui Liang ; Hosoda, Takashi ; Shterengas, Leon ; Stein, Aaron ; Ming Lu ; Kipshidze, Gela ; Belenky, Gregory
Author_Institution :
Dept. of Electr. & Comput. Eng., Stony Brook Univ., Stony Brook, NY, USA
Volume :
27
Issue :
23
fYear :
2015
Firstpage :
2425
Lastpage :
2428
Abstract :
Shallow narrow ridge two-stage cascade GaSb-based type-I quantum well diode lasers emitting at λ ≈ 3 μm were designed and fabricated. Efficient carrier recycling improved the device power conversion and slope efficiencies as compared with the standard multiple quantum well diode lasers. Devices generated more than 100 mW of continuous-wave output power in nearly diffraction limited beam at room temperature. Studies of the current dependence of the modal gain spectra confirmed increased tendency to lateral current spreading in cascade laser heterostructures as compared with the regular diode lasers.
Keywords :
III-V semiconductors; laser beams; light diffraction; optical design techniques; optical fabrication; quantum cascade lasers; GaSb; continuous-wave output power; lateral current spreading; modal gain spectra; nearly diffraction limited beam; room temperature; shallow narrow ridge two-stage cascade gallium antimonide-based type-I quantum well diode laser design; shallow narrow ridge two-stage cascade gallium antimonide-based type-I quantum well diode laser fabrication; temperature 293 K to 298 K; wavelength 3 mum; Diode lasers; Optical device fabrication; Optical losses; Optical waveguides; Power generation; Quantum cascade lasers; Threshold current; GaSb; cascade lasers; mid-infrared; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2015.2464704
Filename :
7226801
Link To Document :
