• DocumentCode
    3605161
  • Title

    60 GHz CMOS gain-boosted LNA with transformer feedbacked neutraliser

  • Author

    Ki-Jin Kim ; Suk-hui Lee ; Sanghoon Park ; Kwang-Ho Ahn

  • Author_Institution
    Korea Electron. Technol. Inst., Seongnam, South Korea
  • Volume
    51
  • Issue
    18
  • fYear
    2015
  • Firstpage
    1461
  • Lastpage
    1462
  • Abstract
    A 60 GHz low-noise amplifier (LNA) using standard 65 nm CMOS technology is presented. A gain of the 60 GHz amplifier was boosted by using a transformer feedbacked capacitor neutraliser. To stabilise the process variations caused by the positive feedback system, the body node of the triple well was adjusted to tune the capacitor value. The theory, simulation and measurements are presented. An implementation prototype is evaluated using on-wafer proving. The LNA showed a measured peak gain of 30 dB and a measured noise of 4.6 dB under 8.9 mW power consumption with a 1 V supply voltage. The measured IIP3 was -26 dBm. This is believed to be the first CMOS 60 GHz LNA to compensate the overlap capacitor with a single-ended structure.
  • Keywords
    CMOS analogue integrated circuits; low noise amplifiers; transformers; CMOS gain-boosted LNA; IIP3; frequency 60 GHz; gain 30 dB; low-noise amplifier; size 65 nm; transformer feedbacked capacitor neutraliser; voltage 1 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2015.0336
  • Filename
    7229549